1
Transistor
2SB819
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1051
s
Features
q
High collector to emitter voltage V
CEO
.
q
Large collector power dissipation P
C
.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC71
3:Emitter
M Type Mold Package
6.9
0.1
0.55
0.1
0.45
0.05
1.0
0.1
1.0
2.5
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
0.1
2.0
0.2
2.4
0.2
1.25
0.05
4.1
0.2
4
.5
0.1
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
50
40
5
3
1.5
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 1mA, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
*2
I
C
= 1.5A, I
B
= 0.15A
*2
I
C
= 2A, I
B
= 0.2A
*2
V
CB
= 5V, I
E
= 0.5A, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
50
40
80
typ
150
45
max
1
100
10
220
1
1.5
Unit
A
A
A
V
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank
Q
R
h
FE
80 ~ 160
120 ~ 220
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2
Transistor
2SB819
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
4.0
3.0
1.0
2.5
3.5
2.0
0.5
1.5
Ta=25C
I
B
=40mA
30mA
25mA
20mA
15mA
10mA
35mA
5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
75C
25C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
600
500
400
300
200
100
V
CE
=5V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
10
100
1000
10000
30
300
3000
0
240
200
160
120
80
40
V
CB
=5V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
150
120
60
90
30
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.001
0.01
0.1
1
10
0
60
50
40
30
20
10
Ta=25C
Base to emitter resistance R
BE
(k
)
Collector to emitter voltage V
CER
(V
)
0
120
100
80
20
60
40
1
1000
100
10
3
30
300
V
CE
=12V
Ambient temperature Ta (C)
I
CEO
(Ta
)
I
CEO
(Ta=25C
)
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
V
CER
-- R
BE
I
CEO
-- Ta
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